(China (Mainland))
Product Summary
The SSH25N40A is a advanced Power MOSFET.
Parametrics
SSH25N40A absolute maximum ratings: (1)Drain Current-Pulsed IDM: 100A; (2)Gate-to-Source Voltage VGS: ±30V; (3)Single Pulsed Avalanche Energy EAS: 1429mJ; (4)Avalanche Current IAR: 25A; (5)Repetitive Avalanche Energy EAR: 27.8mJ; (6)Peak Diode Recovery dv/dt dv/dt: 4.0V/ns.
Features
SSH25N40A features: (1)Avalanche Rugged Technology; (2)Rugged Gate Oxide Technology; (3)Lower Input Capacitance; (4)Improved Gate Charge; (5)Extended Safe Operating Area; (6)Lower Leakage Current : 10 A (Max.) @ VDS = 400V; (7)Low RDS(ON) : 0.162Ω(Typ.).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 SSH25N40A |
Fairchild Semiconductor |
MOSFET TO-3P |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||
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SSH20N45 |
Other |
|
Data Sheet |
Negotiable |
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SSH210 |
Taiwan Semiconductor |
Schottky (Diodes & Rectifiers) 2A,100V,SMD SCHOTTKY Rect |
Data Sheet |
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SSH22N50A |
Fairchild Semiconductor |
MOSFET NCh/500V/22a/0.25Ohm |
Data Sheet |
Negotiable |
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|
SSH25N40A |
Fairchild Semiconductor |
MOSFET TO-3P |
Data Sheet |
Negotiable |
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