Product Summary

The SSH25N40A is a advanced Power MOSFET.

Parametrics

SSH25N40A absolute maximum ratings: (1)Drain Current-Pulsed IDM: 100A; (2)Gate-to-Source Voltage VGS: ±30V; (3)Single Pulsed Avalanche Energy EAS: 1429mJ; (4)Avalanche Current IAR: 25A; (5)Repetitive Avalanche Energy EAR: 27.8mJ; (6)Peak Diode Recovery dv/dt dv/dt: 4.0V/ns.

Features

SSH25N40A features: (1)Avalanche Rugged Technology; (2)Rugged Gate Oxide Technology; (3)Lower Input Capacitance; (4)Improved Gate Charge; (5)Extended Safe Operating Area; (6)Lower Leakage Current : 10 A (Max.) @ VDS = 400V; (7)Low RDS(ON) : 0.162Ω(Typ.).

Diagrams

SSH25N40A Unclamped Inductive Switching Test Circuit & Waveforms

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SSH25N40A
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