(China (Mainland))
Product Summary
The SPN02N60C3 is a coolMOSTM power transistor.
Parametrics
SPN02N60C3 absolute maximum ratings: (1)Pulsed drain current1) I D,pulse T A=25℃: 5.4A; (2)Avalanche energy, single pulse EAS I D=0.9 A, VDD=50 V: 50 mJ; (3)Avalanche energy, repetitive t AR EAR I D=1.8 A, VDD=50 V: 0.07mJ; (4)Avalanche current, repetitive t AR I AR: 1.8A; (5)Drain source voltage slope dv /dt I D=1.8 A, VDS=480 V,; (6)T j=125℃V/ns: 50V/ns; (7)Gate source voltage VGS static: ±20V.
Features
SPN02N60C3 features: (1)New revolutionary high voltage technology; (2)Ultra low gate charge; (3)Ultra low effective capacitances; (4)Extreme dv /dt rated.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 SPN02N60C3 |
Infineon Technologies |
MOSFET COOL MOS PWR TRANS 650V .4A |
Data Sheet |
Negotiable |
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SPN02N60C3 E6433 |
Infineon Technologies |
MOSFET COOL MOS |
Data Sheet |
Negotiable |
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