(China (Mainland))
Product Summary
The RFD16N05SM is a N-channel power MOSFET. It is manufactured using the MegaFET process. The RFD16N05SM was designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. The RFD16N05SM can be operated directly from integrated circuits. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance.
Parametrics
RFD16N05SM absolute maximum ratings: (1)Drain to Source Voltage:50V; (2)Drain to Gate Voltage:50V; (3)Continuous Drain Current:16A; (4)Gate to Source Voltage:±20V; (5)Power Dissipation:72W; (6)Derate above 25℃:0.48W/℃; (7)Operating and Storage Temperature:-55℃ to 175℃.
Features
RFD16N05SM features: (1)16A, 50V; (2)rDS(ON) = 0.047Ω; (3)Temperature Compensating PSPICE Model; (4)Peak Current vs Pulse Width Curve; (5)UIS Rating Curve ; (6)175℃ Operating Temperature; (7)Related Literature: TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 RFD16N05SM |
Fairchild Semiconductor |
MOSFET TO-252AA N-Ch Power |
Data Sheet |
Negotiable |
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RFD16N05SM_Q |
Fairchild Semiconductor |
MOSFET TO-252AA N-Ch Power |
Data Sheet |
Negotiable |
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RFD16N05SM9A |
Fairchild Semiconductor |
MOSFET Power MOSFET |
Data Sheet |
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