Product Summary

The FQAF16N50 is a 500V N channel MOSFET.

Parametrics

FQAF16N50 absolute maximum ratings: (1)VDSS Drain source voltage: 500V; (2)ID drain current: 11.3A; (3)IDM drain current: 45.2A; (4)VGSS gate source voltage: ±30V; (5)EAS single pulsed avalanche energy: 980mJ; (6)IAR avalance current: 11.3A; (7)EAR repetitive avalanche energy: 11mJ; (8)TJ, TSTG operating and storage temperature range: -55 to +150℃.

Features

FQAF16N50 features: (1)11.3A, 500V, RDS(on)=0.32Ω@VGS=10V; (2)Low gate charge; (3)Low crss; (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.

Diagrams

FQAF16N50 gate charge test circuit and waveform

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
FQAF16N50
FQAF16N50
Fairchild Semiconductor
MOSFET 500V N-Channel QFET
Data Sheet
0-1: $1.92
1-25: $1.54
25-100: $1.40
100-250: $1.27
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(USD)		 Quantity
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0-1: $1.82
1-25: $1.64
25-100: $1.50
100-250: $1.35
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180-250: $1.66
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0-1: $1.65
1-25: $1.38
25-100: $1.00
100-250: $0.80
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Negotiable