(China (Mainland))
Product Summary
The FQAF16N50 is a 500V N channel MOSFET.
Parametrics
FQAF16N50 absolute maximum ratings: (1)VDSS Drain source voltage: 500V; (2)ID drain current: 11.3A; (3)IDM drain current: 45.2A; (4)VGSS gate source voltage: ±30V; (5)EAS single pulsed avalanche energy: 980mJ; (6)IAR avalance current: 11.3A; (7)EAR repetitive avalanche energy: 11mJ; (8)TJ, TSTG operating and storage temperature range: -55 to +150℃.
Features
FQAF16N50 features: (1)11.3A, 500V, RDS(on)=0.32Ω@VGS=10V; (2)Low gate charge; (3)Low crss; (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 FQAF16N50 |
Fairchild Semiconductor |
MOSFET 500V N-Channel QFET |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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Data Sheet |
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Data Sheet |
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Data Sheet |
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Data Sheet |
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