Product Summary
The 2SC5802 is a silicon NPN power transistor. It is for high voltage color display horizontal deflection output application.
Parametrics
2SC5802 absolute maximum ratings: (1)Collector-base Voltage, Open emitter, VCBO: 1500V; (2)Collector-emitter Voltage, Open base, VCBO: 800V; (3)Emitter-Base Voltage, Open collector, VEBO: 6V; (4)Collector current (DC), IC: 10A; (5)Collector current-Peak, ICM: 30A; (6)Total power dissipation, TC=25℃, PC: 60W; (7)Junction Temperature, TJ: 150℃ ; (8)Storage Temperature Range, Tstg: -55 to 150℃.
Features
2SC5802 features: (1)With TO-3P(H)IS package; (2)High voltage; (3)high speed; (4)Wide area of safe operation.
Diagrams
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![]() 2SC5802 |
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![]() 2SC5000 |
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![]() 2SC5001TLQ |
![]() ROHM Semiconductor |
![]() Transistors Bipolar (BJT) NPN; HFE RANK Q CPT3 |
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![]() 2SC5001TLR |
![]() ROHM Semiconductor |
![]() Transistors Bipolar (BJT) NPN 20V 10A |
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![]() 2SC5002 |
![]() Other |
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![]() Negotiable |
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![]() 2SC5003 |
![]() Other |
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![]() Negotiable |
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![]() 2SC5004 |
![]() Other |
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![]() Negotiable |
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