Product Summary

The 2SC5584 is a silicon NPN triple diffusion mesa type power transistor.

Parametrics

2SC5584 absolute maximum ratings: (1)Collector to base voltage, VCBO: 1500V; (2)Collector to emitter voltage, VCES: 1500V; (3)Collector to emitter voltage, VCEO: 600V; (4)Emitter to base voltage, VEBO: 7V; (5)Peak collector current, ICP: 30A; (6)Collector current, IC: 20A; (7)Base current, IB: 8A; (8)Collector power dissipation , TC = 25℃, PC: 150W; (9)Collector power dissipation , Ta = 25℃, PC: 3.5W; (10)Junction temperature, Tj: 150℃; (11)Storage temperature, Tstg: -55 to +150℃.

Features

2SC5584 features: (1)High breakdown voltage, and high reliability through the use of a glass passivation layer; (2)High-speed switching; (3)Wide area of safe operation (ASO).

Diagrams

2SC5584 package dimension

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
2SC5584
2SC5584

Other


Data Sheet

Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
2SC5000
2SC5000

Other


Data Sheet

Negotiable 
2SC5001TLQ
2SC5001TLQ

ROHM Semiconductor

Transistors Bipolar (BJT) NPN; HFE RANK Q CPT3

Data Sheet

0-1: $0.63
1-25: $0.55
25-100: $0.42
100-500: $0.28
2SC5001TLR
2SC5001TLR

ROHM Semiconductor

Transistors Bipolar (BJT) NPN 20V 10A

Data Sheet

0-2500: $0.24
2500-5000: $0.24
2SC5002
2SC5002

Other


Data Sheet

Negotiable 
2SC5003
2SC5003

Other


Data Sheet

Negotiable 
2SC5004
2SC5004

Other


Data Sheet

Negotiable