(China (Mainland))
Product Summary
The 2SC5584 is a silicon NPN triple diffusion mesa type power transistor.
Parametrics
2SC5584 absolute maximum ratings: (1)Collector to base voltage, VCBO: 1500V; (2)Collector to emitter voltage, VCES: 1500V; (3)Collector to emitter voltage, VCEO: 600V; (4)Emitter to base voltage, VEBO: 7V; (5)Peak collector current, ICP: 30A; (6)Collector current, IC: 20A; (7)Base current, IB: 8A; (8)Collector power dissipation , TC = 25℃, PC: 150W; (9)Collector power dissipation , Ta = 25℃, PC: 3.5W; (10)Junction temperature, Tj: 150℃; (11)Storage temperature, Tstg: -55 to +150℃.
Features
2SC5584 features: (1)High breakdown voltage, and high reliability through the use of a glass passivation layer; (2)High-speed switching; (3)Wide area of safe operation (ASO).
Diagrams
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 2SC5584 |
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Negotiable |
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2SC5000 |
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Data Sheet |
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Data Sheet |
Negotiable |
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