Product Summary

The 2SC5859 is a silicon NPN triple diffused mesa typ transistor. It is suitable for horizontal deflection output for hdTV, digital TV, projection TV.

Parametrics

2SC5859 absolute maximum ratings: (1)Collector-Base Voltage, VCBO: 1700 V; (2)Collector-Emitter Voltage, VCEO: 750 V; (3)Emitter-Base Voltage, VEBO: 5 V; DC, IC: 23 V; (4)Collector Current Pulse, ICP: 46 A; (5)Base Current, IB: 11.5 A; (6)Collector Power Dissipation, PC: 210 W; (7)Junction Temperature, Tj: 150℃; (8)Storage Temperature Range, Tstg: -55 to 150℃.

Features

2SC5859 features: (1)High Voltage: VCBO = 1700 V; (2)Low Saturation Voltage: VCE (sat) = 3 V (max); (3)High Speed: tf(2) = 0.1 μs (Typ.).

Diagrams

2SC5859 dimensions

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
2SC5859
2SC5859

Other


Data Sheet

Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
2SC5000
2SC5000

Other


Data Sheet

Negotiable 
2SC5001TLQ
2SC5001TLQ

ROHM Semiconductor

Transistors Bipolar (BJT) NPN; HFE RANK Q CPT3

Data Sheet

0-1: $0.63
1-25: $0.55
25-100: $0.42
100-500: $0.28
2SC5001TLR
2SC5001TLR

ROHM Semiconductor

Transistors Bipolar (BJT) NPN 20V 10A

Data Sheet

0-2500: $0.24
2500-5000: $0.24
2SC5002
2SC5002

Other


Data Sheet

Negotiable 
2SC5003
2SC5003

Other


Data Sheet

Negotiable 
2SC5004
2SC5004

Other


Data Sheet

Negotiable