Product Summary
The 2SC5859 is a silicon NPN triple diffused mesa typ transistor. It is suitable for horizontal deflection output for hdTV, digital TV, projection TV.
Parametrics
2SC5859 absolute maximum ratings: (1)Collector-Base Voltage, VCBO: 1700 V; (2)Collector-Emitter Voltage, VCEO: 750 V; (3)Emitter-Base Voltage, VEBO: 5 V; DC, IC: 23 V; (4)Collector Current Pulse, ICP: 46 A; (5)Base Current, IB: 11.5 A; (6)Collector Power Dissipation, PC: 210 W; (7)Junction Temperature, Tj: 150℃; (8)Storage Temperature Range, Tstg: -55 to 150℃.
Features
2SC5859 features: (1)High Voltage: VCBO = 1700 V; (2)Low Saturation Voltage: VCE (sat) = 3 V (max); (3)High Speed: tf(2) = 0.1 μs (Typ.).
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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2SC5859 |
Other |
Data Sheet |
Negotiable |
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Image | Part No | Mfg | Description | Pricing (USD) |
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2SC5000 |
Other |
Data Sheet |
Negotiable |
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2SC5001TLQ |
ROHM Semiconductor |
Transistors Bipolar (BJT) NPN; HFE RANK Q CPT3 |
Data Sheet |
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2SC5001TLR |
ROHM Semiconductor |
Transistors Bipolar (BJT) NPN 20V 10A |
Data Sheet |
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2SC5002 |
Other |
Data Sheet |
Negotiable |
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2SC5003 |
Other |
Data Sheet |
Negotiable |
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2SC5004 |
Other |
Data Sheet |
Negotiable |
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