Product Summary

The w26nm60 is a N-channel 600V 0.125ohm 26A TO-247 zener-protected MDmesh TM power MOSFET. The MDmesh w26nm60 is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Companys PowerMESH. horizontal layout. The resulting product of the w26nm60 has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Companys proprietary strip technique yields overall dynamic performance of the w26nm60 that is significantly better than that of similar competition products.

Parametrics

w26nm60 absolute maximum ratings: (1)VDS Drain-source Voltage (VGS = 0): 600 V; (2)VDGR Drain-gate Voltage (RGS = 20 kΩ): 600 V; (3)VGS Gate- source Voltage: ± 30 V; (4)ID Drain Current (continuous) at TC = 25℃: 30 A; (5)ID Drain Current (continuous) at TC = 100℃: 18.9 A; (6)IDM () Drain Current (pulsed): 120 A; (7)PTOT Total Dissipation at TC = 25℃: 313 W; (8)Derating Factor: 2.5 W/℃.

Features

w26nm60 features: (1)Typical RDS(on) = 0.125 Ω; (2)High dv/dt and avalanche capabilities; (3)Improved esd capability; (4)Low input capacitance and gate charge; (5)Low gate input resistance.

Diagrams

w26nm60 Internal Schematic Diagram