STW6NB100

TO-3P, N channel, 1000V, 2.3ohm, 5.4A, power MESH MOSFET, 2.3W, 30V

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PartNumber:: STW6NB100

Brand:: STMicroelectronics - ST | Pack: TO | D/C: 05+

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Products Upload time: 2011-11-10

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Product Summary

The STW6NB100 is a N channel 1000V 2.3ohm 5.4A TO-247 power MESH MOSFET. Using the latest high voltage technology, STMicroelectronics of the STW6NB100 has designed an advanced family of power Mosfets with outstanding performances. The new patent pending strip layout of the STW6NB100 coupled with the Company proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

Parametrics

STW6NB100 absolute maximum ratings: (1)VDS Drain-source Voltage (VGS = 0): 1000 V; (2)VDGR Drain- gate Voltage (RGS = 20 kW): 1000 V; (3)VGS Gate-source Voltage: ± 30 V; (4)ID Drain Current (continuous) at Tc = 25 ℃: 5.4 A; (5)ID Drain Current (continuous) at Tc = 100 ℃: 3.4 A; (6)IDM(·) Drain Current (pulsed): 21 A; (7)Ptot Total Dissipation at Tc = 25 ℃: 160 W; (8)Tstg Storage Temperature: -65 to 150 ℃; (9)Tj Max. Operating Junction Temperature: 150 ℃.

Features

STW6NB100 features: (1)Typical RDS(on) = 2.3 W; (2)Extremely high dv/dt capability; (3)± 30V gate to source voltage rating; (4)100% avalanche tested; (5)Very low intrinsic capacitances; (6)Gate charge minimized.