Product Summary

The STW6NB100 is a N channel 1000V 2.3ohm 5.4A TO-247 power MESH MOSFET. Using the latest high voltage technology, STMicroelectronics of the STW6NB100 has designed an advanced family of power Mosfets with outstanding performances. The new patent pending strip layout of the STW6NB100 coupled with the Company proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

Parametrics

STW6NB100 absolute maximum ratings: (1)VDS Drain-source Voltage (VGS = 0): 1000 V; (2)VDGR Drain- gate Voltage (RGS = 20 kW): 1000 V; (3)VGS Gate-source Voltage: ± 30 V; (4)ID Drain Current (continuous) at Tc = 25 ℃: 5.4 A; (5)ID Drain Current (continuous) at Tc = 100 ℃: 3.4 A; (6)IDM(·) Drain Current (pulsed): 21 A; (7)Ptot Total Dissipation at Tc = 25 ℃: 160 W; (8)Tstg Storage Temperature: -65 to 150 ℃; (9)Tj Max. Operating Junction Temperature: 150 ℃.

Features

STW6NB100 features: (1)Typical RDS(on) = 2.3 W; (2)Extremely high dv/dt capability; (3)± 30V gate to source voltage rating; (4)100% avalanche tested; (5)Very low intrinsic capacitances; (6)Gate charge minimized.

Diagrams

STW6NB100 Unclamped Inductive Load Test Circuit

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
STW6NB100
STW6NB100

Other


Data Sheet

Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
STW60N10
STW60N10

Other


Data Sheet

Negotiable 
STW60NE10
STW60NE10

STMicroelectronics

MOSFET N-Ch 100 Volt 60 Amp

Data Sheet

Negotiable 
STW6NA80
STW6NA80

Other


Data Sheet

Negotiable 
STW6NB100
STW6NB100

Other


Data Sheet

Negotiable 
STW6N95K5
STW6N95K5

STMicroelectronics

MOSFET N-Ch 950V 1 Ohm 9A Zener SuperMESH 5

Data Sheet

0-1: $2.15
1-10: $1.92
10-100: $1.57
100-250: $1.42
STW6N120K3
STW6N120K3

STMicroelectronics

MOSFET N-Ch 1200V 1.95 Ohm 6A Zener SuperMESH3

Data Sheet

0-1: $3.76
1-10: $3.36
10-25: $3.02
25-100: $2.75