Product Summary

The STW60N10 is a N - channel enhancement mode power mos transistor.

Parametrics

STW60N10 absolute maximum ratings: (1)IDM Drain Current (pulsed) 240A; (2)Ptot Total Dissipation at Tc = 25 ℃: 70 W; (3)Derating Factor: 0.56 W/℃; (4)VISO Insulation Withstand Voltage (DC): 4000 V; (5)Tstg Storage Temperature: -65 to 175 ℃; (6)Tj Max. Operating Junction Temperature: 175 150 ℃.

Features

STW60N10 features: (1)Typical RDS(on) = 0.02 W; (2)Avalanche rugged technology; (3)100% avalanche tested; (4)Repetitive avalanche data at 100℃; (5)Low gate charge; (6)Very high current capability; (7)175℃ operating temperature; (8)Applicatiooriented characterization.

Diagrams

STW60N10 internal schematic diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
STW60N10
STW60N10
Other

Data Sheet
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Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
STW60N10
STW60N10
Other

Data Sheet
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