Product Summary

The IXFH25N10 is a HIPERFET power MOSFTET. The IXFH25N10 is designed to provide superior dv/dt performence while eliminating the need for discrete, fast recovery free wheeling rectifiers in a broad range of power switching applications. The new dress of the IXFH25N10 uses process which improves the ruggedness of the FET while reducing the reverse recovery time of the intrinsic rectifier to less than 250ns at clevated junction temperature.

Parametrics

IXFH25N10 absolute maximum ratings: (1)Drain source voltage: 100V; (2)Drain current: 25A; (3)On resistance: 0.030Ohms; (4)Power Diss: 125W.

Diagrams

IXFH25N10 circuit diaram

IXFH10N90
IXFH10N90

Ixys

MOSFET 10 Amps 900V

Data Sheet

Negotiable 
IXFH120N25T
IXFH120N25T


MOSFET N-CH 250V 120A TO-247

Data Sheet

0-60: $5.51
IXFH17N80Q
IXFH17N80Q

Ixys

MOSFET 17 Amps 800V 0.60 Rds

Data Sheet

Negotiable 
IXFH23N80Q
IXFH23N80Q

Ixys

MOSFET 23 Amps 800V 0.40 Rds

Data Sheet

Negotiable 
IXFH15N100Q
IXFH15N100Q

Ixys

MOSFET 15 Amps 1000V 0.725 Rds

Data Sheet

Negotiable 
IXFH22N55
IXFH22N55

Ixys

MOSFET 550V 22A

Data Sheet

Negotiable