Product Summary

The IXFH25N10 is a HIPERFET power MOSFTET. The IXFH25N10 is designed to provide superior dv/dt performence while eliminating the need for discrete, fast recovery free wheeling rectifiers in a broad range of power switching applications. The new dress of the IXFH25N10 uses process which improves the ruggedness of the FET while reducing the reverse recovery time of the intrinsic rectifier to less than 250ns at clevated junction temperature.

Parametrics

IXFH25N10 absolute maximum ratings: (1)Drain source voltage: 100V; (2)Drain current: 25A; (3)On resistance: 0.030Ohms; (4)Power Diss: 125W.

Diagrams

IXFH25N10 circuit diaram

IXFH 18N60P
IXFH 18N60P

Other


Data Sheet

Negotiable 
IXFH 28N50F
IXFH 28N50F

Other


Data Sheet

Negotiable 
IXFH/IXFM42N20
IXFH/IXFM42N20

Other


Data Sheet

Negotiable 
IXFH100N25P
IXFH100N25P

Ixys

MOSFET 100 Amps 250V 0.027 Rds

Data Sheet

Negotiable 
IXFH102N15T
IXFH102N15T

Ixys

MOSFET 102 Amps 0V

Data Sheet

Negotiable 
IXFH10N100
IXFH10N100

Ixys

MOSFET 1KV 10A

Data Sheet

Negotiable