Product Summary

The IRLZ34NS is a HEXFET Power MOSFET. It utilizes advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRLZ34NS is well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The IRLZ34NS provides the highest power capability and the lowest possible onresistance in any existing surface mount package.

Parametrics

IRLZ34NS absolute maximum ratings: (1)Continuous Drain Current, VGS @ 10V:27A; (2)Continuous Drain Current, VGS @ 10V:19A; (3)Pulsed Drain Current:110A; (4)Power Dissipation:56 W; (5)Linear Derating Factor:0.37 W/℃; (6)Gate-to-Source Voltage:±16 V; (7)Single Pulse Avalanche Energy:110 mJ; (8)Avalanche Current:16 A; (9)Repetitive Avalanche Energy:5.6 mJ; (10)Peak Diode Recovery dv/dt:10 V/ns; (11)Operating Junction and Storage Temperature Range:-55℃ to + 175℃; (12)Soldering Temperature, for 10 seconds:300℃ (1.6mm from case).

Features

IRLZ34NS features: (1)Logic-Level Gate Drive; (2)Advanced Process Technology; (3)Surface Mount; (4)Dynamic dv/dt Rating; (5)175℃ Operating Temperature; (6)Fast Switching; (7)Fully Avalanche Rated.

Diagrams

IRLZ34NS circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRLZ34NS
IRLZ34NS

MOSFET N-CH 55V 30A D2PAK
Data Sheet
Negotiable 
IRLZ34NSPBF
IRLZ34NSPBF
International Rectifier
MOSFET
Data Sheet
0-1: $1.20
1-25: $0.77
25-100: $0.56
100-250: $0.48
IRLZ34NSTRLPBF
IRLZ34NSTRLPBF
International Rectifier
MOSFET MOSFT 55V 30A 35mOhm 16.7nC LogLvl
Data Sheet
0-1: $1.30
1-25: $0.84
25-100: $0.61
100-250: $0.57
IRLZ34NSTRR
IRLZ34NSTRR

MOSFET N-CH 55V 30A D2PAK
Data Sheet
0-800: $0.68
IRLZ34NSTRL
IRLZ34NSTRL
International Rectifier
MOSFET N-CH 55V 30A D2PAK
Data Sheet
1-800: $0.68