Product Summary

The IRFPG50 is a NPN Silicon Germanium RF Transistor.

Parametrics

IRFPG50 maximum ratings: (1)Collector-emitter voltage VCEO: 2.3 V; (2)Collector-emitter voltage VCES: 7.5 V; (3)Collector-base voltage VCBO: 7.5 V; (4)Emitter-base voltage VEBO: 1.2 V; (5)Collector current IC: 80 mA; (6)Base current IB: 3 mA; (7)Junction temperature Tj: 150 ℃; (8)Ambient temperature TA: -65 to 150 ℃; (9)Storage temperature Tstg: -65 to 150 ℃.

Features

IRFPG50 features: (1)High gain low noise RF transistor; (2)Provides outstanding performance for a wide range of wireless applications; (3)Ideal for CDMA and WLAN applications; (4)Outstanding noise figure F = 0.7 dB at 1.8 GHz; (5)Outstanding noise figure F = 1.3 dB at 6 GHz; (6)Maximum stable gain. Gms = 21.5 dB at 1.8 GHz; Gma = 11 dB at 6 GHz; (7)Gold metallization for extra high reliability.

Diagrams

IRFPG50 Package Equivalent Circuit

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IRFPG50
IRFPG50

Vishay/Siliconix

MOSFET N-Chan 1000V 6.1 Amp

Data Sheet

0-331: $7.12
331-500: $6.53
500-1000: $6.27
IRFPG50, SiHFPG50
IRFPG50, SiHFPG50

Other


Data Sheet

Negotiable 
IRFPG50PBF
IRFPG50PBF

Vishay/Siliconix

MOSFET N-Chan 1000V 6.1 Amp

Data Sheet

0-1: $2.63
1-10: $2.11
10-100: $1.93
100-250: $1.74