IRFPG50

NPN Silicon Germanium, RF Transistor, 2.3 V VCEO, 3 mA IB, 1.2 V VEBO, High gain, low noise

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Price:: US $1.00~4.00 / piece [Get Latest Price]

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PartNumber:: IRFPG50

Brand:: International Rectifier - IR | Pack: TO | D/C: 10+

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Products Upload time: 2011-11-10

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Product Summary

The IRFPG50 is a NPN Silicon Germanium RF Transistor.

Parametrics

IRFPG50 maximum ratings: (1)Collector-emitter voltage VCEO: 2.3 V; (2)Collector-emitter voltage VCES: 7.5 V; (3)Collector-base voltage VCBO: 7.5 V; (4)Emitter-base voltage VEBO: 1.2 V; (5)Collector current IC: 80 mA; (6)Base current IB: 3 mA; (7)Junction temperature Tj: 150 ℃; (8)Ambient temperature TA: -65 to 150 ℃; (9)Storage temperature Tstg: -65 to 150 ℃.

Features

IRFPG50 features: (1)High gain low noise RF transistor; (2)Provides outstanding performance for a wide range of wireless applications; (3)Ideal for CDMA and WLAN applications; (4)Outstanding noise figure F = 0.7 dB at 1.8 GHz; (5)Outstanding noise figure F = 1.3 dB at 6 GHz; (6)Maximum stable gain. Gms = 21.5 dB at 1.8 GHz; Gma = 11 dB at 6 GHz; (7)Gold metallization for extra high reliability.