Product Summary

The H33N20FI is a N-channel enhancement mode power MOS transistor. The applications of the H33N20FI are: High current, high speed switching; Uninterruptible power supply; Motor control, audio amplifiers; Industrial actuator; DC-DC and DC-AC converters for telecom, industrial and consumer encvironment.

Parametrics

H33N20FI absolute maximum ratings: (1)VDD drain source voltage: 200V; (2)VDGR drain gate voltage: 200V; (3)VGS gate source voltage: ±20V; (4)ID drain current at Tc=25℃: 33A; (5)Tstg storage temperature: -65 to 150℃; (6)Tj max. operating juction temperature: 150℃.

Features

H33N20FI features: (1)Typical RDS=0.073Ω; (2)Avalanche rugged technology; (3)100% avalanche tested; (4)Repetitive avalanche data at 100℃; (5)Application origented characterization.

Diagrams

H33N20FI internal schematic diagram