(China (Mainland))
Product Summary
The FQPF6N60 is a 600V N-Channel MOSFET. The N-Channel enhancement mode power field effect transistor FQPF6N60 is produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FQPF6N60 is well suited for high efficiency switch mode power supply.
Parametrics
FQPF6N60 absolute maximum ratings: (1)IDM Drain Current - Pulsed: 14.4 A; (2)VGSS Gate-Source Voltage: ±30 V; (3)EAS Single Pulsed Avalanche Energy: 440 mJ; (4)IAR Avalanche Current: 3.6 A; (5)EAR Repetitive Avalanche Energy: 4.4 mJ; (6)dv/dt Peak Diode Recovery dv/dt: 4.5 V/ns; (7)TJ, TSTG Operating and Storage Temperature Range: -55 to +150 ℃.
Features
FQPF6N60 features: (1)3.6A, 600V, RDS(on) = 1.5@VGS = 10 V; (2)Low gate charge ( typical 20 nC); (3)Low Crss ( typical 10 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.
Diagrams
| Image | Part No | Mfg | Description |  |
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 FQPF6N60 |
Fairchild Semiconductor |
MOSFET 600V N-Channel QFET |
Data Sheet |
Negotiable |
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FQPF6N60C |
Fairchild Semiconductor |
MOSFET N-CH/600V/6A/QFET |
Data Sheet |
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