(China (Mainland))
Product Summary
The IRG4PSC71UD is an insulated gate bipolar transistor with ultrafast soft recovery diode(Vces=600V, Vce(on)typ.=1.67V, @Vge=15V, Ic=60A).
Parametrics
IRG4PSC71UD absolute maximum ratings: (1)ILM Clamped Inductive Load Current: 200; (2)IF @ TC = 100℃ Diode Continuous Forward Current: 60; (3)IFM Diode Maximum Forward Current: 350; (4)VGE Gate-to-Emitter Voltage: ± 20 V; (5)PD @ TC = 25℃ Maximum Power Dissipation: 350; (6)PD @ TC = 100℃ Maximum Power Dissipation: 140; (7)TJ Operating Junction and TSTG Storage Temperature Range:-55 to +150℃.
Features
IRG4PSC71UD features: (1)Generation 4 IGBT design provides tighter parameter distribution and higher efficiency (minimum switching and conduction losses) than prior generations; (2)IGBT co-packaged with HEXFRED ultrafast, ultrasoft recovery anti-parallel diodes for use in bridge configurations; (3)Industry-benchmark Super-247 package with higher power handling capability compared to same footprint TO-247; (4)Creepage distance increased to 5.35mm.
Diagrams
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 IRG4PSC71UD |
International Rectifier |
IGBT W/DIODE 600V 85A SUPER-247 |
Data Sheet |
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IRG4PSC71UDPBF |
International Rectifier |
IGBT Transistors 600V UltraFast 8-60kHz |
Data Sheet |
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