(China (Mainland))
Product Summary
The FQAF13N80 is a 800V N-channel MOSFET. The N-Channel enhancement mode power field effect transistor FQAF13N80 is produced using Fairchild proprietary, planar stripe, DMOS technology. This advanced technology of the FQAF13N80 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FQAF13N80 is well suited for high efficiency switch mode power supplies.
Parametrics
FQAF13N80 absolute maximum ratings: (1)IDM Drain Current - Pulsed: 32 A; (2)VGSS Gate-Source Voltage: ± 30 V; (3)EAS Single Pulsed Avalanche Energy: 1100 mJ; (4)IAR Avalanche Current: 8.0 A; (5)EAR Repetitive Avalanche Energy: 12 mJ; (6)dv/dt Peak Diode Recovery dv/dt: 4.0 V/ns; (7)PD Power Dissipation (TC = 25℃): 120 W; (8)Derate above 25℃: 0.96 W/℃; (9)TJ, TSTG Operating and Storage Temperature Range: -55 to +150 ℃; (10)TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds: 300 ℃.
Features
FQAF13N80 features: (1)8.0A, 800V, RDS(on) = 0.75@VGS = 10 V; (2)Low gate charge ( typical 68 nC); (3)Low Crss ( typical 30 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.
Diagrams
| Image | Part No | Mfg | Description |  |
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 FQAF13N80 |
Fairchild Semiconductor |
MOSFET 800V N-Channel QFET |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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FQAF10N80 |
Fairchild Semiconductor |
MOSFET 800V N-Channel QFET |
Data Sheet |
Negotiable |
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FQAF11N40 |
Fairchild Semiconductor |
MOSFET 400V N-Channel QFET |
Data Sheet |
Negotiable |
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FQAF11N90 |
Fairchild Semiconductor |
MOSFET 900V N-Channel QFET |
Data Sheet |
Negotiable |
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FQAF11N90C |
Fairchild Semiconductor |
MOSFET N-CH/900V/7A/A.QFET |
Data Sheet |
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FQAF12N60 |
Fairchild Semiconductor |
MOSFET 600V N-Channel QFET |
Data Sheet |
Negotiable |
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FQAF12P20 |
Fairchild Semiconductor |
MOSFET 200V P-Channel QFET |
Data Sheet |
Negotiable |
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