Product Summary

The BDW84C is a Silicon Epitaxial-Base NPN power monolithic Darlington transistor mounted in Jedec TO-218 plastic package. The BDW84C is intended for use in power linear and switching applications. The complementary type is BDW84C.

Parametrics

BDW84C absolute maximum ratings: (1)Collector-Base Voltage (IE = 0), VCBO: 100V; (2)Collector-Emitter Voltage (IB = 0), VCEO: 100V; (3)Emitter-Base Voltage (IC = 0), VEBO: 5V; (4)Collector Current, IC: 15A; (5)Collector Peak Current, ICM: 40A; (6)Base Current, IB: 0.5A; (7)Total Dissipation at Tc=25℃, Ptot: 130W; (8)Storage Temperature, Tstg: -65 to 150℃; (9)Max. Operating Junction Temperature, Tj: 150℃.

Features

BDW84C features: (1)BDW84C IS A STMicroelectronics preferred salestype; (2)complementary PNP - NPN devices; (3)high current capability; (4)fast switching speed; (5)high DC current gain.

Diagrams

BDW84C INTERNAL SCHEMATIC DIAGRAM

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BDW84C
BDW84C

STMicroelectronics

Transistors Darlington PNP Power Darlington

Data Sheet

Negotiable 
BDW84C-S
BDW84C-S

Bourns

Transistors Darlington 150W 15A PNP

Data Sheet

Negotiable