2SK3482-Z-E1

TO252, N-channel, power MOS FET, Low on-state resistance, 18 A, 3600 pF, 4.5 V

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PartNumber:: 2SK3482-Z-E1

Brand:: NEC - Nec | Pack: TO | D/C: 05+

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Products Upload time: 2011-11-10

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Product Summary

The 2SK3482-Z-E1 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Parametrics

2SK3482-Z-E1 absolute maximum ratings: (1)Drain to Source Voltage (VGS = 0 V) VDSS: 100 V; (2)Gate to Source Voltage (VDS = 0 V) VGSS: ±20 V; (3)Drain Current (DC) ID(DC): ±36 A; (4)Drain Current (Pulse) ID(pulse): ±100 A; (5)Total Power Dissipation (TC = 25℃) PT: 50 W; (6)Total Power Dissipation (TA = 25℃) PT: 1.0 W; (7)Channel Temperature Tch: 150 ℃; (8)Storage Temperature Tstg: –55 to +150 ℃; (9)Single Avalanche Current IAS: 30 A; (10)Single Avalanche Energy EAS: 90 mJ.

Features

2SK3482-Z-E1 features: (1)Low on-state resistance. RDS(on)1 = 33 mMAX. (VGS = 10 V, ID = 18 A). RDS(on)2 = 39 mMAX. (VGS = 4.5 V, ID = 18 A); (2)Low Ciss: Ciss = 3600 pF TYP.; (3)Built-in gate protection diode; (4)TO-251/TO-252 package.