(China (Mainland))
Product Summary
The 2SK2610 is a Field Effect Transistor. The device is suitable for Chopper Regulator, DC-DC Converter and Motor Drive Applications.
Parametrics
2SK2610 absolute maximum ratings: (1)Drain-source voltage, VDSS: 900V; (2)Drain-gate voltage (RGS = 20 kΩ), VDGR: 900 V ; (3)Gate-source voltage, VGSS: ±30 V; DC, ID: 5 V; (4)Drain current Pulse, IDP: 15 A; (5)Drain power dissipation (Tc = 25℃), PD: 150 W; (6)Single pulse avalanche energy, EAS: 595 mJ ; (7)Avalanche current, IAR: 5 A; (8)Repetitive avalanche energy, EAR: 15 mJ; (9)Channel temperature, Tch: 150℃; (10)Storage temperature range, Tstg: -55 to 150℃.
Features
2SK2610 features: (1)Low drain-source ON resistance: RDS (ON) = 2.3Ω (typ.); (2)High forward transfer admittance: |Yfs|= 4.4 S (typ.); (3)Low leakage current: IDSS = 100 μA (max) (VDS = 720 V); (4)Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 2SK2610 |
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MOSFET N-CH 900V 5A TO-3PN |
Data Sheet |
Negotiable |
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2SK2610(F,T) |
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MOSFET N-CH 900V 5A TO-3PN |
Data Sheet |
Negotiable |
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