Product Summary

The 2SA1941 is a TOSHIBA transistor with silicon PNP triple diffused type for power amplifier applications.

Parametrics

2SA1941 absolute maximum ratings: (1)Collector-base voltage, VCBO: -140V; (2)Collector-emitter voltage, VCEO: -140V; (3)Emitter-base voltage, VEBO: -5V; (4)Collector current, IC: -10A; (5)Base current, IB: -1A; (6)Collector power dissipation (Tc = 25℃), PC: 100W; (7)Junction temperature, Tj: 150℃; (8)Storage temperature range, Tstg: -55 to 150℃.

Features

2SA1941 features: (1)High breakdown voltage: VCEO = -140 V (min); (2)Complementary to 2SC5198; (3)Recommended for 70-W high-fidelity audio frequency amplifier output stage.

Diagrams

2SA1941 package

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
2SA1941
2SA1941
Other

Data Sheet
Negotiable 
2SA1941-O(Q,T)
2SA1941-O(Q,T)
Toshiba
Transistors Bipolar (BJT) PNP VCEO -140V 70-W DC -10A 100W
Data Sheet
0-490: $0.64
490-500: $0.59
500-1000: $0.58
1000-2000: $0.50
2SA1941-O(Q)
2SA1941-O(Q)

TRANSISTOR PNP 140V 10A TO-3PN
Data Sheet
0-150: $1.24