(China (Mainland))
Product Summary
The 2SD1651C is a NPN triple diffused planar silicon transistor.
Parametrics
2SD1651C absolute maximum ratings: (1)Collector-to-Base Voltage, VCBO: 1500V; (2)Collector-to-Emitter Voltage, VCEO: 800V; (3)Emitter-to-Base Voltage, VEBO: 6V; (4)Collector Current, IC: 6A; (5)Collector Current (Pulse), ICP: 15A; (6)Collector Dissipation, PC: 3.0W; (7)Junction Temperature, Tj: 150℃; (8)Storage Temperature, Tstg: -55 to +150℃.
Features
2SD1651C features: (1)High speed; (2)High breakdown voltage(VCBO=1500V); (3)High reliability(Adoption of HVP process); (4)Adoption of MBIT process; (5)On-chip damper diode.
Diagrams
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