(China (Mainland))
Product Summary
The 2SC3807 is a NPN epitaxial planar silicon transistor for General-Purpose Amp Applications.
Parametrics
2SC3807 absolute maximum ratings: (1)Collector-to-Base Voltage, VCBO: 30 V ; (2)Collector-to-Emitter Voltage, VCEO: 25 V ; (3)Emitter-to-Base Voltage, VEBO: 15 V ; (4)Collector Current, IC: 2 A ; (5)Collector Current (Pulse), ICP: 4 A ; (6)Collector Dissipation, PC: 1.2 W; at Tc=25℃: 15 W ; (7)Junction Temperature, Tj: 150 ℃; (8)Storage Temperature, Tstg: –55 to +150 ℃.
Features
2SC3807 features: (1)Large current capacity (IC=2A); (2)Adoption of MBIT process; (3)High DC current gain (hFE=800 to 3200); (4)Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V); (5)High VEBO (VEBO≥15V).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
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 2SC3807 |
Other |
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Data Sheet |
Negotiable |
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2SC3807C |
Other |
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Data Sheet |
Negotiable |
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2SC3807MP |
Other |
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Data Sheet |
Negotiable |
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