Product Summary
The SUD25N06-45L-E3 is a N-channel 60V MOSFET.
Parametrics
SUD25N06-45L-E3 absolute maximum ratings: (1)Pulsed Drain Current IDM: 30 A; (2)Continuous Source Current (Diode Conduction) IS: 25; (3)Avalanche Current IAR: 25; (4)Repetitive Avalanche Energy (Duty Cycle 1%) L = 0.1 mH EAR: 31 mJ; (5)Maximum Power Dissipation TC = 25℃ PD: 50W; (6)TA = 25℃: 2.5a; (7)Operating Junction and Storage Temperature Range TJ, Tstg: 55 to 175 ℃.
Features
SUD25N06-45L-E3 features: (1)VDS 60V; (2)rDS(on) 0.035Ω @ VGS = 10 V, 0.045Ω @ VGS = 4.5 V; (3)ID 25A.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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SUD25N06-45L-E3 |
Vishay/Siliconix |
MOSFET 60V 25A 50W |
Data Sheet |
Negotiable |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
SUD23N06-31 |
Other |
Data Sheet |
Negotiable |
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SUD23N06-31-GE3 |
Vishay/Siliconix |
MOSFET N-Ch MOSFET 60V 31 mohm @ 10V |
Data Sheet |
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SUD23N06-31L |
Vishay/Siliconix |
MOSFET 60V 23A 100W |
Data Sheet |
Negotiable |
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SUD23N06-31L-E3 |
Vishay/Siliconix |
MOSFET 60V 23A 100W |
Data Sheet |
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SUD23N06-31L-T4-E3 |
MOSFET N-CH D-S 60V TO252 |
Data Sheet |
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SUD23N06-31-T4-GE3 |
MOSFET N-CH D-S 60V TO252 |
Data Sheet |
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