Product Summary
The IRF7493TRPBF is a HEXFET Power MOSFET. The applications of the IRF7493TRPBF include High frequency DC-DC converters, Lead-Free.
Parametrics
IRF7493TRPBF absolute maximum ratings: (1)Drain-to-Source Voltage: 80 V; (2)Gate-to-Source Voltage: ±20 V; (3)ID @ TC = 25℃, Continuous Drain Current, VGS @ 10V: 9.3 A; (4)ID @ TC = 70℃ Continuous Drain Current, VGS @ 10V: 7.4 A; (5)Pulsed Drain Current: 74 A; (6)PD @TC = 25℃, Maximum Power Dissipation: 2.5 W; (7)PD @TC = 70℃, Maximum Power Dissipation: 1.6 W; (8)Linear Derating Factor: 0.02 W/℃; (9)Operating Junction and Storage Temperature Range: -55 to +150 ℃.
Features
IRF7493TRPBF features: (1)Low Gate-to-Drain Charge to Reduce Switching Losses; (2)Fully Characterized Capacitance Including Effective COSS to Simplify Design; (3)Fully Characterized Avalanche Voltage and Current.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IRF7493TRPBF |
International Rectifier |
MOSFET MOSFT 80V 9.2A 15mOhm 31nC Qg |
Data Sheet |
|
|
|||||||||||||
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
IRF710 |
Vishay/Siliconix |
MOSFET N-Chan 400V 2.0 Amp |
Data Sheet |
|
|
|||||||||||||
IRF710, SiHF710 |
Other |
Data Sheet |
Negotiable |
|
||||||||||||||
IRF710_R4943 |
Fairchild Semiconductor |
MOSFET TO-220AB |
Data Sheet |
Negotiable |
|
|||||||||||||
IRF7101 |
International Rectifier |
MOSFET N-CH 20V 3.5A 8-SOIC |
Data Sheet |
|
|
|||||||||||||
IRF7101PBF |
International Rectifier |
MOSFET |
Data Sheet |
|
|
|||||||||||||
IRF7101TR |
International Rectifier |
MOSFET N-CH 20V 3.5A 8-SOIC |
Data Sheet |
|
|