Product Summary

The GT50N322A is a insulated gate bipolar transistor silicon N channel IGBT.

Parametrics

GT50N322A absolute maximum ratings: (1)Collector-emitter voltage VCES: 1000 V; (2)Gate-emitter voltage VGES: ± 25 V; (3)Collector current, DC IC: 50. 1ms ICP: 120A; (4)Diode forward current. DC IF: 15. 1ms IFP: 120A; (5)Collector power dissipation(Tc = 25℃) PC: 156 W; (6)Junction temperature Tj: 150℃; (7)Storage temperature Tstg: -55 to 150℃.

Features

GT50N322A features: (1)FRD included between emitter and collector; (2)Enhancement mode type; (3)High speed IGBT; (4)Low saturation voltage: VCE (sat) = 2.2 V (typ.) (IC = 60 A).

Diagrams

GT50N322A Equivalent Circuit

GT50G321
GT50G321

Other


Data Sheet

Negotiable 
GT50J102(Q)
GT50J102(Q)

Toshiba

IGBT Transistors IGBT 600V 50A

Data Sheet

Negotiable 
GT50J121
GT50J121

Other


Data Sheet

Negotiable 
GT50J122
GT50J122

Other


Data Sheet

Negotiable 
GT50J301(Q)
GT50J301(Q)

Toshiba

IGBT Transistors 600V/150A DIS+FRD

Data Sheet

Negotiable 
GT50J322
GT50J322

Other


Data Sheet

Negotiable