Product Summary

The GT50N322A is a insulated gate bipolar transistor silicon N channel IGBT.

Parametrics

GT50N322A absolute maximum ratings: (1)Collector-emitter voltage VCES: 1000 V; (2)Gate-emitter voltage VGES: ± 25 V; (3)Collector current, DC IC: 50. 1ms ICP: 120A; (4)Diode forward current. DC IF: 15. 1ms IFP: 120A; (5)Collector power dissipation(Tc = 25℃) PC: 156 W; (6)Junction temperature Tj: 150℃; (7)Storage temperature Tstg: -55 to 150℃.

Features

GT50N322A features: (1)FRD included between emitter and collector; (2)Enhancement mode type; (3)High speed IGBT; (4)Low saturation voltage: VCE (sat) = 2.2 V (typ.) (IC = 60 A).

Diagrams

GT50N322A Equivalent Circuit

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