(China (Mainland))
Product Summary
The 2SC6093 is a NPN triple diffused planar silicon transistor.
Parametrics
2SC6093 absolute maximum ratings: (1)Collector-to-Base Voltage, VCBO: 1500V; (2)Collector-to-Emitter Voltage, VCEO: 800V; (3)Emitter-to-Base Voltage, VEBO: 5V; (4)Collector Current, IC: 5A; (5)Collector Current (Pulse), ICP: 12A; (6)Collector Dissipation, PC: 2.0W; (7)Junction Temperature, Tj: 150℃; (8)Storage Temperature, Tstg: 55 to +150℃.
Features
2SC6093 features: (1)High speed; (2)High breakdown voltage (VCBO=1500V); (3)High reliability (Adoption of HVP process); (4)Adoption of MBIT process; (5)On-chip damper diode.
Diagrams
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 2SC6093LS |
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2SC6010 |
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2SC6011 |
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2SC6011A |
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2SC6012 |
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Negotiable |
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2SC6013 |
Other |
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Negotiable |
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2SC6014 |
Other |
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Negotiable |
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