Product Summary

The 2SC5200 is a silicon NPN triple diffused type transistor from TOSHIBA. It is widely used in power amplifier application. It is also recommend for 100W high fidelity audio frequency amplifier output stage applications.

Parametrics

2SC5200 absolute maximum ratings: (1)Collector-base voltage, VCBO: 230V; (2)Collector-emitter voltage, VCEO: 1300V; (3)Emitter-base voltage, VEBO: 5V; (4)Collector current, IC: 15A; (5)Base current, IB: 1.5A; (6)Collector power dissipation(Tc = 25℃), PC: 150W; (7)Junction temperature, Tj: 150℃; (8)Storage temperature range, Tstg: -55 to 150℃.

Features

2SC5200 features: (1)High breakdown voltage: VCEO=230V (min); (2)Complementary to 2SA1943; (3)Suitable for use in 100W high fidelity audio amplifier’s output stage.

Diagrams

2SC5200 package dimension

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
2SC5200
2SC5200
STMicroelectronics
Transistors Bipolar (BJT) 230V High Power NPN 30 MHz Audio Pwr App
Data Sheet
Negotiable 
2SC5200-O
2SC5200-O

TRANS NPN 230V 15A TO-3PL
Data Sheet
Negotiable 
2SC5200OTU
2SC5200OTU
Fairchild Semiconductor
Transistors Bipolar (BJT) NPN 230V 15A 150W
Data Sheet
0-1: $1.56
1-25: $1.26
25-50: $1.16
50-100: $1.13
2SC5200-O(Q)
2SC5200-O(Q)
Toshiba
Transistors Bipolar (BJT) NPN 230V 15A
Data Sheet
0-1: $1.49
1-10: $1.19
10-100: $0.92
100-250: $0.88
2SC5200RTU
2SC5200RTU
Fairchild Semiconductor
Transistors Bipolar (BJT) NPN 230V 15A 150W
Data Sheet
0-400: $1.01
400-500: $0.79
500-1000: $0.73
1000-2000: $0.65
2SC5200-R(Q)
2SC5200-R(Q)
Toshiba
Transistors Bipolar (BJT) Transistor NPN 230V 15A
Data Sheet
Negotiable