Product Summary

The 2SC5196 is a NPN triple diffused type device from Toshiba Semiconductor.

Parametrics

2SC5196 absolute maximum ratings: (1)Collector-Emitter Voltage, VCBO: 80V ; (2)Collector-Emitter Voltage, VCEO: 80V ; (3)Emitter-Base Voltage, VEBO: 5V ; (4)Collector Current-Continuous, IC: 6A ; (5)Base Current-Continuous, IB: 0.6A ; (6)Collector Power Dissipation @TC≤25℃, PC: 60W ; (7)Junction Temperature, TJ: 150℃ ; (8)Storage Temperature, Tstg: -55 to 150℃.

Features

2SC5196 features: (1)Low Collector Saturation Voltage: VCE(sat)= 2.0V(Min) @IC= 5A; (2)Good Linearity of hFE; (3)Complement to Type 2SA1939.

Diagrams

2SC5196 package dimension

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
2SC5196
2SC5196

Other


Data Sheet

Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
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2SC5000
2SC5000

Other


Data Sheet

Negotiable 
2SC5001TLQ
2SC5001TLQ

ROHM Semiconductor

Transistors Bipolar (BJT) NPN; HFE RANK Q CPT3

Data Sheet

0-1: $0.63
1-25: $0.55
25-100: $0.42
100-500: $0.28
2SC5001TLR
2SC5001TLR

ROHM Semiconductor

Transistors Bipolar (BJT) NPN 20V 10A

Data Sheet

0-2500: $0.24
2500-5000: $0.24
2SC5002
2SC5002

Other


Data Sheet

Negotiable 
2SC5003
2SC5003

Other


Data Sheet

Negotiable 
2SC5004
2SC5004

Other


Data Sheet

Negotiable