(China (Mainland))
Product Summary
The BCP53-16 is a PNP Silicon AF Transistor.
Parametrics
BCP53-16 absolute maximum ratings: (1)Collector-emitter voltage:80V; (2)Collector-base voltage:100V; (3)Emitter-base voltage:5V; (4)Collector current:1A; (5)Peak collector current, tp ≤ 10 ms:1.5A; (6)Base current:100mA; (7)Peak base current:200mA; (8)Total power dissipation- TS ≤ 120℃:2W; (9)Junction temperature:150℃; (10)Storage temperature:-65℃ to 150℃.
Features
BCP53-16 features: (1)For AF driver and output stages; (2)High collector current; (3)Low collector-emitter saturation voltage; (4)Complementary types: BCP54 to BCP56 (NPN); (5)Pb-free (RoHS compliant) package1); (6)Qualified according AEC Q101.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||||
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 BCP53-16 |
STMicroelectronics |
Transistors Bipolar (BJT) PNP Medium Power |
Data Sheet |
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BCP53-16 /T3 |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS MED PWR TAPE13 |
Data Sheet |
Negotiable |
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BCP53-16 T/R |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS MED PWR TAPE-7 |
Data Sheet |
Negotiable |
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BCP53-16,115 |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS MED PWR TAPE-7 |
Data Sheet |
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BCP53-16,135 |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS MED PWR TAPE13 |
Data Sheet |
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 |
BCP53-16T1 |
ON Semiconductor |
Transistors Bipolar (BJT) 1.5A 100V PNP |
Data Sheet |
Negotiable |
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BCP53-16T1G |
ON Semiconductor |
Transistors Bipolar (BJT) 1.5A 100V PNP |
Data Sheet |
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BCP53-16T3 |
ON Semiconductor |
Transistors Bipolar (BJT) SS GP XSTR PNP 80V |
Data Sheet |
Negotiable |
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